منابع مشابه
AlNXOY THIN FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING
AlNxOy thin films were produced by DC reactive magnetron sputtering, using an atmosphere of argon and a reactive gas mixture of nitrogen and oxygen, for a wide range of partial pressures of reactive gas. During the deposition, the discharge current was kept constant and the discharge parameters were monitored. The deposition rate, chemical composition, morphology, structure and electrical resis...
متن کاملSuperhard NbB2-x thin films deposited by dc magnetron sputtering
We have deposited weakly textured substoichiometric NbB2-x thin films by magnetron sputtering from a NbB2 target. The films exhibit superhardness (42 ± 4 GPa), previously only observed in overstoichiometric TiB2 thin films, and explained by a self-organized nanostructuring, where thin TiB2 columnar grains hinder nucleation and slip of dislocations and a B-rich tissue phase between the grains pr...
متن کاملDeposited Indium Tin Oxide (ito) Thin Films by Dc- Magnetron Sputtering on Polyethylene Terephthalate Substrate (pet)
M.K.M. ALI , K. IBRAHIM , OSAMA S HAMAD , M.H. EISA , M.G. FARAJ , and F. AZHARI 1 School of Physics, University Sains Malaysia, Penang 11800, Malaysia Department of Physics, College of Science, Sudan University of Science and Technology, Khartoum 11113, Sudan School of Electrical and Electronic Engineering, University Sains Malaysia, Penang 11800, Malaysia E-mail: [email protected], kamarul@...
متن کاملCrystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon
Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under va...
متن کاملMorphological, structural and photoresponse characterization of ZnO nanostructure films deposited on plasma etched silicon substrates
ZnO nanostructure films were deposited by radio frequency (RF) magnetron sputtering on etched silicon (100) substrates using dry Ar/SF6 plasma, at two etching times of 5 min and 30 min, and on non etched silicon surface. Energy dispersive X-ray (EDX) technique was employed to investigate the elements contents for etched substrates as well as ZnO films, where it is found to be stoichiometric. Su...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Materials Science and Chemical Engineering
سال: 2017
ISSN: 2327-6045,2327-6053
DOI: 10.4236/msce.2017.56002